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Y7C1327
WCSS0418V1P
256K x 18 Synchronous-Pipelined Cache RAM
Features
* Supports 100-MHz bus for Pentium and PowerPCTM operations with zero wait states * Fully registered inputs and outputs for pipelined operation * 256K by 18 common I/O architecture * 3.3V core power supply * 2.5V / 3.3V I/O operation * Fast clock-to-output times -- 3.5 ns (for 166-MHz device) -- 4.0 ns (for 133-MHz device) * * * * * * -- 5.5 ns (for 100-MHz device) User-selectable burst counter supporting Intel Pentium interleaved or linear burst sequences Separate processor and controller address strobes Synchronous self-timed writes Asynchronous Output Enable JEDEC-standard 100 TQFP pinout "ZZ" Sleep Mode option and Stop Clock option The WCSS0418V1P I/O pins can operate at either the 2.5V or the 3.3V level. The I/O pins are 3.3V tolerant when VDDQ=2.5V. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise is 3.5 ns (166-MHz device). The WCSS0418V1P supports either the interleaved burst sequence used by the Intel Pentium processor or a linear burst sequence used by processors such as the PowerPC. The burst sequence is selected through the MODE pin. Accesses can be initiated by asserting either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC) at clock rise. Address advancement through the burst sequence is controlled by the ADV input. A 2-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualified with the four Byte Write Select (BW[1:0]) inputs. A Global Write Enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Selects (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. In order to provide proper data during depth expansion, OE is masked during the first clock of a read cycle when emerging from a deselected state.
Functional Description
The WCSS0418V1P is a 3.3V, 256K by 18 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic.
Logic Block Diagram
CLK ADV ADSC ADSP A[17:0] GW BWE BW 1 BW0
MODE (A[1;0]) 2 BURST Q0 CE COUNTER Q1 CLR Q ADDRESS CE REGISTER D 16 18
18
16
D DQ[15:8], DP[1] Q BYTEWRITE REGISTERS D DQ[7:0], DP[0] Q BYTEWRITE REGISTERS
256KX18 MEMORY ARRAY
CE1 CE2 CE3
18 D ENABLE CE CE REGISTER Q
18
D ENABLE DELAY Q REGISTER OE ZZ SLEEP CONTROL
OUTPUT REGISTERS CLK
INPUT REGISTERS CLK
DQ[15:0] DP[1:0]
Intel and Pentium are registered trademarks of Intel Corporation. PowerPC is a trademark of IBM Corporation.
Document #: 38-05247
Revised February 6, 2001
WCSS0418V1P
Selection Guide
-166 Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) Commercial Commercial 3.5 420 10 -133 4.0 375 10 -100 5.5 325 10
Pin Configurations
100-Lead TQFP
OE ADSC BWS1 BWS0 ADSP ADV 84 83 BWE
CE1
CE2
CE3
VDD
CLK
VSS
GW
NC
NC
A6
A7
A8 82
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
NC NC NC VDDQ VSS NC NC DQ8 DQ9 VSS VDDQ DQ10 DQ11 NC VDD NC VSS DQ12 DQ13 VDDQ VSS DQ14 DQ15 DP1 NC VSS VDDQ NC NC NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49
100
81
A9
80 79 78 77 76 75 74 73 72 71 70 69 68
A10 NC NC VDDQ VSS NC DP0 DQ7 DQ6 VSS VDDQ DQ5 DQ4 VSS NC VDD ZZ DQ3 DQ2 VDDQ VSS DQ1 DQ0 NC NC VSS VDDQ NC NC NC
WCSS0418V1P
BYTE1
67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50
BYTE0
DNU DNU
MODE A5
DNU DNU A11 A12
A4
A3
A2
A1
A0
A13
A14
A15 A16
VSS
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VDD
A17
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WCSS0418V1P
Pin Configurations (continued)
119-Ball BGA 1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQb NC VDDQ NC DQb VDDQ NC DQb VDDQ DQb NC NC NC VDDQ 2 A CE2 A NC DQb NC DQb NC VDD DQb NC DQb NC DQPb A A NC 3 A A A VSS VSS VSS BWb VSS NC VSS Vss VSS VSS VSS MODE A NC 4 ADSP ADSC VDD NC CE1 OE ADV GW VDD CLK NC BWE A1 A0 VDD NC NC 5 A A A VSS VSS VSS Vss VSS NC VSS BWa VSS VSS VSS VSS A NC 6 A CE3 A DQPa NC DQa NC DQa VDD NC DQa NC DQa NC A A NC 7 VDDQ NC NC NC DQa VDDQ DQa NC VDDQ DQa NC VDDQ NC DQa NC ZZ VDDQ
Pin Definitions
Name A[17:0] Description Address Inputs used to select one of the 64K address locations. Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A[1:0] feed the 2-bit counter. InputByte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM. Synchronous Sampled on the rising edge of CLK. InputGlobal Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global Synchronous write is conducted (ALL bytes are written, regardless of the values on BW[1:0] and BWE). InputByte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be Synchronous asserted LOW to conduct a byte write. Input-Clock Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. InputChip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 Synchronous and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. InputChip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 Synchronous and CE3 to select/deselect the device. InputChip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 Synchronous and CE2 to select/deselect the device. InputOutput Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When LOW, Asynchronous the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. InputAdvance Input Signal, sampled on the rising edge of CLK. When asserted, it automatically increSynchronous ments the address in a burst cycle. InputAddress Strobe from Processor, sampled on the rising edge of CLK. When asserted LOW, A[17:0] Synchronous is captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. I/O InputSynchronous
BW[1:0] GW BWE CLK CE1 CE2 CE3 OE
ADV ADSP
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WCSS0418V1P
Pin Definitions (continued)
Name ADSC Description Address Strobe from Controller, sampled on the rising edge of CLK. When asserted LOW, A[17:0] is captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. InputZZ "sleep" Input. This active HIGH input places the device in a non-time critical "sleep" condition Asynchronous with data integrity preserved. Leaving ZZ floating or NC will default the device into an active state. ZZ pin has an internal pull-down. I/OBidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the Synchronous rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by A[17:0] during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQ[15:0] and DP[1:0] are placed in a three-state condition. Power Supply Power Supply inputs to the core of the device. Should be connected to 3.3V power supply. Ground Ground for the core of the device. Should be connected to ground of the system. I/O Power Power Supply for the I/O circuitry. Should be connected to a 3.3V or 2.5V power supply. Supply I/O Ground Ground for the I/O circuitry. Should be connected to ground of the system. InputSelects Burst Order. When tied to GND selects linear burst sequence. When tied to VDDQ or left Static floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. When left floating or NC, defaults to interleaved burst order. Mode pin has an internal pull-up. No Connects. is HIGH. The address presented to the address inputs (A[17:0]) is stored into the address advancement logic and the Address Register while being presented to the memory core. The corresponding data is allowed to propagate to the input of the Output Registers. At the rising edge of the next clock the data is allowed to propagate through the output register and onto the data bus within 3.5 ns (166-MHz device) if OE is active LOW. The only exception occurs when the SRAM is emerging from a deselected state to a selected state, its outputs are always three-stated during the first cycle of the access. After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single read cycles are supported. Once the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output will three-state immediately. Single Write Accesses Initiated by ADSP This access is initiated when both of the following conditions are satisfied at clock rise: (1) ADSP is asserted LOW, and (2) CE1, CE2, CE3 are all asserted active. The address presented to A[17:0] is loaded into the address register and the address advancement logic while being delivered to the RAM core. The write signals (GW, BWE, and BW[1:0]) and ADV inputs are ignored during this first cycle. ADSP-triggered write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQ[15:0] and DP[1:0] inputs is written into the corresponding address location in the RAM core. If GW is HIGH, then the write operation is controlled by BWE and BW[1:0] signals. The WCSS0418V1P provides byte write capability that is described in the Write Cycle Description table. Asserting the Byte Write Enable input (BWE) with the selected Byte Write (BW[1:0]) input will selectively write to only the desired bytes. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Page 4 of 17 I/O InputSynchronous
ZZ
DQ[15:0] DP[1:0]
VDD VSS VDDQ VSSQ MODE
NC
Introduction
Functional Overview All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 3.5 ns (166-MHz device). The WCSS0418V1P supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486 processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BW[1:0]) inputs. A Global Write Enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous Chip Selects (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses This access is initiated when the following conditions are satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2) CE1, CE2, CE3 are all asserted active, and (3) the write signals (GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1 Document #: 38-05247
WCSS0418V1P
Because the WCSS0418V1P is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ[15:0] and DP[1:0] inputs. Doing so will three-state the output drivers. As a safety precaution, DQ[15:0] and DP[1:0] are automatically three-stated whenever a write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC ADSC write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted HIGH, (3) CE1, CE2, CE3 are all asserted active, and (4) the appropriate combination of the write inputs (GW, BWE, and BW[1:0]) are asserted active to conduct a write to the desired byte(s). ADSC-triggered write accesses require a single clock cycle to complete. The address presented to A[17:0] is loaded into the address register and the address advancement logic while being delivered to the RAM core. The ADV input is ignored during this cycle. If a global write is conducted, the data presented to the DQ[15:0] and DP[1:0] is written into the corresponding address location in the RAM core. If a byte write is conducted, only the selected bytes are written. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Because the WCSS0418V1P is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ[15:0] and DP[1:0] inputs. Doing so will three-state the output drivers. As a safety precaution, DQ[15:0] and DP[1:0] are automatically three-stated whenever a write cycle is detected, regardless of the state of OE. a linear burst sequence. The burst sequence is user selectable through the MODE input. Asserting ADV LOW at clock rise will automatically increment the burst counter to the next address in the burst sequence. Both read and write burst operations are supported.
Interleaved Burst Sequence
First Address A[1:0] 00 01 10 11 Second Address A[1:0] 01 00 11 10 Third Address A[1:0] 10 11 00 01 Fourth Address A[1:0] 11 10 01 00
Linear Burst Sequence
First Address A[1:0] 00 01 10 11 Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation "sleep" mode. Two clock cycles are required to enter into or exit from this "sleep" mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the "sleep" mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the "sleep" mode. CE1, CE2, CE3, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Second Address A[1:0] 01 10 11 00 Third Address A[1:0] 10 11 00 01 Fourth Address A[1:0] 11 00 01 10
Burst Sequences
The WCSS0418V1P provides a two-bit wraparound counter, fed by A[1:0], that implements either an interleaved or linear burst sequence. The interleaved burst sequence is designed specifically to support Intel Pentium applications. The linear burst sequence is designed to support processors that follow
ZZ Mode Electrical Characteristics
Parameter IDDZZ tZZS tZZREC Description Snooze mode standby current Device operation to ZZ ZZ recovery time Test Conditions ZZ > VDD - 0.2V ZZ > VDD - 0.2V ZZ < 0.2V 2tCYC Min. Max. 3 2tCYC Unit mA ns ns
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WCSS0418V1P
Cycle Descriptions[1, 2, 3]
Next Cycle Unselected Unselected Unselected Unselected Unselected Begin Read Begin Read Continue Read Continue Read Continue Read Continue Read Suspend Read Suspend Read Suspend Read Suspend Read Begin Write Begin Write Begin Write Continue Write Continue Write Suspend Write Suspend Write ZZ "Sleep" Add. Used None None None None None External External Next Next Next Next Current Current Current Current Current Current External Next Next Current Current None ZZ L L L L L L L L L L L L L L L L L L L L L L H CE3 X 1 X 1 X 0 0 X X X X X X X X X X 0 X X X X X CE2 X X 0 X 0 1 1 X X X X X X X X X X 1 X X X X X CE1 1 0 0 0 0 0 0 X X 1 1 X X 1 1 X 1 0 X 1 X 1 X ADSP X 0 0 1 1 0 1 1 1 X X 1 1 X X 1 X 1 1 X 1 X X ADSC 0 X X 0 0 X 0 1 1 1 1 1 1 1 1 1 1 0 1 1 1 1 X ADV X X X X X X X 0 0 0 0 1 1 1 1 1 1 X 0 0 1 1 X OE X X X X X X X 1 0 1 0 1 0 1 0 X X X X X X X X DQ Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z DQ Hi-Z DQ Hi-Z DQ Hi-Z DQ Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Write X X X X X X Read Read Read Read Read Read Read Read Read Write Write Write Write Write Write Write X
Notes: 1. X = "Don't Care," 1 = HIGH, 0 = LOW. 2. Write is defined by BWE, BW[1:0], and GW. See Write Cycle Description table. 3. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
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WCSS0418V1P
Write Cycle Description[4, 5, 6]
Function Read Read Write Byte 0 - DQ[7:0] Write Byte 1 - DQ[15:8] Write Bytes 1, 0 Write Byte 2 - DQ[23:16] Write Bytes 2, 0 Write Bytes 2, 1 Write Bytes 2, 1, 0 Write Byte 3 - DQ[31:24] Write Bytes 3, 0 Write Bytes 3, 1 Write Bytes 3, 1, 0 Write Bytes 3, 2 Write Bytes 3, 2, 0 Write Bytes 3, 2, 1 Write All Bytes Write All Bytes GW 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 BWE 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 X BW3 X 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 X BW2 X 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 X BW1 X 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 X BW0 X 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 X
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ..................................... -65C to +150C Ambient Temperature with Power Applied.................................................. -55C to +125C Supply Voltage on VDD Relative to GND.........-0.5V to +4.6V DC Voltage Applied to Outputs in High Z State[7] ....................................... -0.5V to VDD + 0.5V DC Input Voltage[7] .................................... -0.5V to VDD + 0.5V
Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current.................................................... >200 mA
Operating Range
Range Com'l Industrial Ambient Temperature[8] 0C to +70C -40C to +85C VDD 3.3V -5%/+10% VDDQ 2.5V -5% 3.3V +10%
Notes: 4. X = "Don't Care," 1 = Logic HIGH, 0 = Logic LOW. 5. The SRAM always initiates a read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW[1:0]. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is a don't care for the remainder of the write cycle. 6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQ[15:0];DP[1:0] = High-Z when OE is inactive or when the device is deselected, and DQ[15:0];DP[1:0] = data when OE is active. 7. Minimum voltage equals -2.0V for pulse durations of less than 20 ns. 8. TA is the case temperature.
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WCSS0418V1P
Electrical Characteristics Over the Operating Range
Parameter VDD VDDQ VOH VOL VIH VIH VIL VIL IX Description Power Supply Voltage I/O Supply Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input HIGH Voltage Input LOW Voltage[7] Input LOW Voltage[7] Input Load Current except ZZ and MODE 3.3V -5%/+10% 2.5V -5% to 3.3V +10% VDDQ = 3.3V, VDD = Min., IOH = -4.0 mA VDDQ = 2.5V, VDD = Min., IOH = -2.0 mA VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA VDDQ = 2.5V, VDD = Min., IOL = 2.0 mA VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V GND VI VDDQ 2.0 1.7 -0.3 -0.3 -5 -30 5 -5 30 -5 6-ns cycle, 166 MHz 7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz ISB1 Automatic CS Power-Down Current--TTL Inputs Max. VDD, Device Deselected, VIN VIH or VIN VIL f = fMAX = 1/tCYC 6-ns cycle, 166 MHz 7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz 5 420 375 325 150 125 115 10 Test Conditions Min. 3.135 2.375 2.4 2.0 0.4 0.7 VDD + 0.3V VDD + 0.3V 0.8 0.7 5 Max. 3.6 3.6 Unit V V V V V V V V V V A A A A A A mA mA mA mA mA mA mA
Input Current of MODE Input = VSS Input = VDDQ Input Current of ZZ IOZ IDD Output Leakage Current VDD Operating Supply Current Input = VSS Input = VDDQ GND VI VDDQ, Output Disabled VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC
ISB2
Automatic CS Max. VDD, Device Deselected, Power-Down VIN 0.3V or VIN > VDDQ - 0.3V, Current--CMOS Inputs f = 0 Automatic CS Max. VDD, Device Deselected, or Power-Down VIN 0.3V or VIN > VDDQ - 0.3V Current--CMOS Inputs f = fMAX = 1/tCYC Automatic CS Power-Down Current--TTL Inputs Max. VDD, Device Deselected, VIN VIH or VIN VIL, f = 0 6-ns cycle, 166 MHz 7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz
ISB3
120 95 85 18
mA mA mA mA
ISB4
Capacitance[9]
Parameter CIN CCLK CI/O Description Input Capacitance Clock Input Capacitance Input/Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VDD = 3.3V, VDDQ = 3.3V Max. 4 4 4 Unit pF pF pF
Note: 9. Tested initially and after any design or process changes that may affect these parameters.
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WCSS0418V1P
AC Test Loads and Waveforms
OUTPUT Z0 =50 RL =50 VL = 1.5V 3.3V OUTPUT 5 pF R=351 INCLUDING JIG AND SCOPE R=317 ALL INPUT PULSES 2.5V 10% GND 2.5 ns 90%
[10]
90% 10% 2.5 ns
(a)
(b)
(c)
Switching Characteristics Over the Operating Range[11, 12, 13]
-166 Parameter tCYC tCH tCL tAS tAH tCO tDOH tADS tADH tWES tWEH tADVS tADVH tDS tDH tCES tCEH tCHZ tCLZ tEOHZ tEOLZ tEOV Clock HIGH Clock LOW Address Set-Up Before CLK Rise Address Hold After CLK Rise Data Output Valid After CLK Rise Data Output Hold After CLK Rise ADSP, ADSC Set-Up Before CLK Rise ADSP, ADSC Hold After CLK Rise BWE, GW, BW[1:0] Set-Up Before CLK Rise BWE, GW, BW[1:0] Hold After CLK Rise ADV Set-Up Before CLK Rise ADV Hold After CLK Rise Data Input Set-Up Before CLK Rise Data Input Hold After CLK Rise Chip Select Set-Up Chip Select Hold After CLK Rise Clock to High-Z[12] 0 High-Z[12, 13] Low-Z[12, 13] Valid[12] 0 3.5 3.5 0 4.0 Clock to Low-Z[12] OE HIGH to Output OE LOW to Output OE LOW to Output 1.5 2.0 0.5 2.0 0.5 2.0 0.5 2.0 0.5 2.0 0.5 3.5 0 3.5 0 5.5 Description Clock Cycle Time Min. 6.0 1.7 1.7 2.0 0.5 3.5 2.0 2.5 0.5 2.5 0.5 2.5 0.5 2.5 0.5 2.5 0.5 3.5 0 5.5 Max. Min. 7.5 1.9 1.9 2.5 0.5 4.0 2.0 2.5 0.5 2.5 0.5 2.5 0.5 2.5 0.5 2.5 0.5 3.5 -133 Max. Min. 10 3.5 3.5 2.5 0.5 5.5 -100 Max. Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Notes: 10. Input waveform should have a slew rate of 1 V/ns. 11. Unless otherwise noted, test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and load capacitance. Shown in (a) and (b) of AC Test Loads. 12. tCHZ, tCLZ, tEOV, tEOLZ, and tEOHZ are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured 200 mV from steady-state voltage. 13. At any given voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ.
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WCSS0418V1P
Switching Waveforms
Write Cycle Timing[14, 15]
Single Write tCH tCYC Burst Write
Pipelined Write Unselected
CLK
tADH tADS tCL ADSP ignored with CE1 inactive
ADSP
tADS tADH
ADSC initiated write
ADSC
tADVS tADVH
ADV
tAS
ADV Must Be Inactive for ADSP Write
WD1 tAH WD2 WD3
ADD
GW
tWS tWH tWS CE1 masks ADSP tWH
WE
tCES tCEH
CE1
tCES tCEH Unselected with CE2
CE2
CE3
tCES tCEH
OE
tDS
tDH High-Z
Data In
High-Z
1a 1a
2a = UNDEFINED
2b
2c
2d
3a
= DON'T CARE
Notes: 14. WE is the combination of BWE, BW[1:0], and GW to define a write cycle (see Write Cycle Description table). 15. WDx stands for Write Data to Address X.
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WCSS0418V1P
Switching Waveforms (continued)
Read Cycle Timing[14, 16]
Single Read tCYC
Burst Read tCH Pipelined Read
Unselected
CLK
tADS tADH tCL ADSP ignored with CE1 inactive
ADSP
tADS ADSC initiated read
ADSC
tADVS tADH tADVH RD1 tAH RD2 RD3 Suspend Burst
ADV
tAS
ADD
GW
tWS
tWH
tWS
WE
tCES tCEH tWH CE1 masks ADSP
CE1
Unselected with CE2
CE2
tCES tCEH
CE3
tCES tCEH tEOV tOEHZ tDOH tCO
OE
Data Out
1a 1a tCLZ
2a
2b
2c 2c
2d
3a tCHZ
= DON'T CARE
Note: 16. RDx stands for Read Data from Address X.
= UNDEFINED
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WCSS0418V1P
Switching Waveforms (continued)
Read/Write Cycle Timing[14, 15, 16, 17]
Single Read tCYC
Single Write tCH
Burst Read Pipelined Read
Unselected
CLK
tADS tADH tCL ADSP ignored with CE1 inactive
ADSP
tADS
ADSC
tADVS tADH
ADV
tAS tADVH RD1 tAH WD2 RD3
ADD
GW
tWS tWH
tWS
WE
tCES tCEH tWH CE1 masks ADSP
CE1
CE2
tCES tCEH
CE3
tCES tCEH tEOV tEOHZ See Note 17 tEOLZ tCO 1a 1a Out 2a In = DON'T CARE
Note: 17. Data bus is driven by SRAM, but data is not guaranteed.
OE
tDS 3a Out
tDH 3b Out 3c Out
tDOH 3d Out tCHZ
Data In/Out
2a Out
= UNDEFINED
Document #: 38-05247
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WCSS0418V1P
Switching Waveforms (continued)
Pipeline Timing[18, 19] tCH tCYC tCL
CLK
tAS
ADD
RD1
RD2
RD3
RD4
WD1
WD2
WD3
WD4
tADS
ADSC initiated Reads
tADH
ADSC
ADSP initiated Reads
ADSP
ADV
tCES tCEH
CE1
CE
tWES tWEH
WE
ADSP ignored with CE1 HIGH
OE
tCLZ
Data In/Out
tCO
1a Out
2a Out
3a Out
4a Out
1a In
2a In tDOH
3a In
4a D(C) In
Back to Back Reads = DON'T CARE
tCHZ = UNDEFINED
Notes: 18. Device originally deselected. 19. CE is the combination of CE2 and CE3. All chip selects need to be active in order to select the device.
Document #: 38-05247
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WCSS0418V1P
Switching Waveforms (continued)
ZZ Mode Timing[20, 21]
CLK
ADSP
HIGH
ADSC CE1 CE2
LOW
HIGH
CE3
ZZ
tZZS
IDD
IDD(active) IDDZZ
tZZREC
I/Os Three-state
Notes: 20. Device must be deselected when entering "ZZ" mode. See Cycle Description table for all possible signal conditions to deselect the device. 21. I/Os are in three-state when exiting "ZZ" sleep mode.
Document #: 38-05247
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WCSS0418V1P
Ordering Information
Speed (MHz) 166 Ordering Code WCSS0418V1P-166AC WCSS0418V1P-166BGC 133 WCSS0418V1P-133AC WCSS0418V1P-133BGC WCSS0418V1P-133AI WCSS0418V1P-133BGI 100 WCSS0418V1P-100AC WCSS0418V1P-100BGC WCSS0418V1P-100AI WCSS0418V1P-100BGI Package Name A101 BG119 A101 BG119 A101 BG119 A101 BG119 A101 BG119 Package Type 100-Lead Thin Quad Flat Pack 119-Ball BGA 100-Lead Thin Quad Flat Pack 119-Ball BGA 100-Lead Thin Quad Flat Pack 119-Ball BGA 100-Lead Thin Quad Flat Pack 119-Ball BGA 100-Lead Thin Quad Flat Pack 119-Ball BGA Industrial Commercial Industrial Commercial Operating Range Commercial
Package Diagrams
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101
51-85050-A
Document #: 38-05247
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WCSS0418V1P
Package Diagrams (continued)
119-Lead FBGA (14 x 22 x 2.4 mm) BG119
51-85115
Document #: 38-05247
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WCSS0418V1P
Document Title: CY7C1327B 256K x 18 Synchronous-Pipelined Cache RAM Document Number: 38-05140 REV. ** New ECN NO. 109884 113310 Issue Date 09/10/01 02/04/02 Orig. of Change SZV GLC Description of Change Change from Spec number: 38-00935 to 38-05140 Change from Spec number: 38-05140 to 38-05247
Document #: 38-05247
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